Tunable Asymmetric Resistance States and Optoelectronic Responses Enabled by Layered Ferroelectric Polarization

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ABSTRACT Two‐dimensional (2D) ferroelectric field‐effect transistors can modulate the electrical and optoelectronic properties of channel materials via ferroelectric polarization, offering substantial application potential in non‐volatile memory, secure communication, and intelligent logic circuits. This work reports a CuCrP 2 S 6 /WSe 2 ferroelectric heterojunction which is capable of realizing tunable asymmetric resistance states and optoelectronic responses. By applying back‐gate voltage pulses of varying amplitudes, multi‐level ferroelectric polarization modulation of CuCrP 2 S 6 is achieved, which further induces the asymmetric multi‐level resistive switching in the channel material with the cooperative influence of asymmetric Schottky barriers. The device not only displays stable non‐volatile multi‐resistive states with a maximum on‐off ratio surpassing 10 4 but also exhibits tunable photoresponse characteristics. Leveraging its excellent dynamic resistance switching capability and tunable photoelectric performance, multifunctional applications including secure communication and logic operations are achieved in single device. This integrated structure delivers a highly competitive approach for the development of miniaturized and multifunctional integrated electronic systems. Furthermore, it provides novel insights into the synergistic modulation of 2D material properties by harnessing the unique attributes of 2D ferroelectric materials, thereby promoting the development of next‐generation intelligent electronic devices.

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