Improved Reliability and Thermal Stability in Amorphous Oxide Semiconductor Transistors

Le résumé fourni par la source

Three-dimensional integration with logic and memory co-located in the upper levels above high-performance silicon transistors is being explored to enable new functionality and improved system-level performance. Achieving this vision requires back-end-of-line (BEOL) compatible semiconductor materials and device processes, which remain a significant challenge. Amorphous oxide semiconductors (AOS) are promising BEOL candidates because they can maintain high carrier mobility in the disordered amorphous phase and that results from their deposition at low, even room-temperature, processing conditions. In this work, I will describe our group’s efforts to enhance the performance and reliability of transistors based on doped amorphous indium oxide (In₂O₃). We demonstrate improvements in threshold-voltage stability and thermal stability through the incorporation of tantalum, tungsten, and germanium dopants, and we compare both the dopant-specific effects and the influence of processing techniques such as reactive sputtering and atomic layer deposition. Finally, we highlight our use of adaptive-learning experimental design to efficiently explore the wide compositional and processing space inherent to AOS materials, as well as machine-learning approaches that accelerate film and device characterization. Together, these advances provide a pathway toward high-performance, BEOL-compatible transistor technologies for monolithic 3D integration.

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