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Accès ouvert déclaré 2026 preprint

Charge-trap flash memory cells of the brain

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1Pays d’affiliation déclarés

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Le résumé fourni par la source

Abstract Despite extensive study of cellular mechanisms underlying long-term potentiation, no single specific protein or gene has been identified which encodes an individual unit of information, or memory bit. Indeed, the brain engram remains a knowledge gap. Guided by hypothesis-driven statistical analyses of biological data, it suggested two distinct domains of investigation: biological macroscopic measurements and quantum-scale mechanisms. The theory of exclusion led us to cancel one-by-one biologically implausible alternatives. We present evidence supporting quantum tunnelling as a potential mechanism for memory storage within the ubiquitous near-ideal topological insulator located in-between myelin layers, specifically in the paranodal and juxtaparanodal regions, but not at the nodes of Ranvier. Superposition of up to concentric 300 myelin layers, spiraled, and highly compacted wrapping a single axon and each wrap could host hundreds to thousands of niches, as “memory cells”, collectively consisting of a massive array of cells. The disjointed 3D spatial superposition allows storage of charges, nodes not facing from a layer to next. The thickness of a single myelin layer ranges from 7.0 to 20 nm. The dimension scale is approximately the exact dimensions of the charge trap, the tunnel and dielectric also equipping current AI microchips. Stored charges are positive ions, with similar effect whether charges are negative or positive charges creating an electromagnetic field. To “write” data, following an action potential, this voltage applies to the control gates of the myelin layers producing an ionic charge injection. This causes charges to gain energy and “tunnel” through the myelin layer across nodes, via quantum tunneling, and deep into the concentric myelin multilayers. This is creating an insulated trapping of K + ions isolated from the system. In a long white matter tract bundle, the near-perfect isolation of millions of axons within compressed myelin wrap-ion channel K + /Na + systems provides quantum coherence and precision of asynchronous firing property. The injected ionic charges ( K + ) become physically stuck in “traps” within the myelin layers. The K + ions may not move freely, completely trapped after AP ceases. Mirroring a single-bit, single-level-cell, a trapped ionic charge (ions K + ) may represent a “1,” while an empty cell (absence of K + ) represents a “0”. The trial-and-error process, with a Bayesian inference which may have also been the core evolution of the learning human brain. Based on selected mathematical equations, we analyzed the general scheme on how deep learning may be embedded in the brain.

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Le contrôle bibliographique ouvert

DOI retrouvé dans Crossref DOI retrouvé ; titre concordant.

Titre Crossref
Charge-trap flash memory cells of the brain
Date Crossref
03/07/2026
Éditeur
openRxiv
Type
posted-content

Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.

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Les sujets associés

Photoreceptor and optogenetics researchNeural dynamics and brain functionNeuroscience and Neural Engineering

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