Near-Room-Temperature Performance Characterization of InAsSb XBn Devices

Le résumé fourni par la source

This research aims to enhance the operating temperature of mid-infrared InAsSb XBn detectors (~4.5 μm cutoff) through specific device architecture. Measurements performed under front-side illumination without an antireflection coating showed that at 290 K, the quantum efficiency was 34% for nBn devices compared to 45% for pBn devices. The nBn and pBn devices displayed distinct performance metrics at 290 K under a 500-mV reverse bias. The nBn devices recorded a dark current density of 0.348 A/cm2 and a peak specific detectivity of 8.24×108 cm‧Hz1/2/W, whereas the pBn devices demonstrated improved characteristics with values of 0.536 A/cm2 and 5.92×109 cm‧Hz1/2/W, respectively. The results indicate that these XBn structured barrier photodetectors exhibit excellent performance and demonstrate significant potential for near-room temperature applications.

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