One-sided negative differential conductance and pronounced zero-bias nonlinearity in InAs/AlSb triple-barrier resonant tunneling diodes

Le résumé fourni par la source

Abstract We report InAs/AlSb triple-barrier resonant tunneling diodes (TB-RTDs) exhibiting one-sided negative differential conductance (NDC) and pronounced zero-bias nonlinearity at room temperature. A peak current of 320.1 µ A is obtained at a negative collector bias of −0.34 V, with a peak-to-valley current ratio of 6.61. The observed polarity-selective transport is interpreted in terms of a resonance channel involving the first quasi-bound state (QBS) in the collector-side well and the second QBS in the emitter-side well. An absolute curvature coefficient of 23.14 V −1 is obtained at zero bias, indicating strong intrinsic rectification behavior. These results identify mixed-order quasi-bound-state coupling in asymmetric InAs/AlSb TB-RTDs as a viable route to polarity-selective NDC and strong zero-bias nonlinear response.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.