Cycle-to-failure Prediction of Power Semiconductor Modules based on Early Degradation Indicators

Le résumé fourni par la source

Power cycling tests are widely used to obtain cycle-to-failure data for qualifying the package reliability of power semiconductor modules. In conventional practice, each test must be run to failure, which makes lifetime characterization costly and time-consuming. This paper reveals that early-stage degradation already contains a compact and physically meaningful indicator of device lifetime. An early degradation indicator is identified from the resistance evolution during the initial wear-out stage. Based on this indicator, a data-driven approach is developed to infer cycle-to-failure using only the first 5% of power cycling data. Experimental validation is conducted on 65 power semiconductor modules tested under 11 distinct conditions. The results show a linear relationship, in logarithmic form, between the early-stage degradation rate and cycle-to-failure across all tested conditions. These findings demonstrate that early degradation rates can serve as a reliable lifetime indicator, enabling substantial reduction of test duration without relying on full degradation trajectory prediction.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.