Study of the Switching Dynamics of Ta 2 O 5 -Based RRAM Cells

Résumé fourni par la source

Resistive random-access memory (RRAM) stands out as a highly promising memory technology due to its outstanding performance characteristics. However, comprehensive modeling and understanding of its resistive switching mechanisms remain key challenges. This study investigates the resistive switching behavior of a Ta/Ta2O5/Pt RRAM device through a combination of experimental characterization and multiphysics simulation using COMSOL. The fabricated cell exhibits robust and repeatable bipolar resistive switching, attributed to the voltage-induced formation and rupture of conductive filaments (CFs). The finite element model incorporates field-driven oxygen vacancy migration, quantum tunneling conduction, and self-consistent Joule heating effects to capture the switching dynamics. Simulation results reveal a tunneling-dominated SET process and a thermally assisted RESET mechanism, aligning closely with experimental I-V characteristics. The strong agreement between simulation and measurement highlights the model’s predictive accuracy and its effectiveness in guiding RRAM design optimization, particularly in terms of biasing strategies and thermal reliability.

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