Characteristics of multi-level resistance states in hafnium oxide-based nonvolatile memristors
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Abstract HfO 2 -based nonvolatile memristors have attracted broad research interest in neuromorphic computing. However, the stochastic nature of conductive filament formation poses significant challenges, including high operating voltages, low on/off ratios, limited endurance, and high device variability, which severely limits their applications in high-precision neuromorphic computing. To overcome these limitations and explore the potential of embedded metal nano‐island (NIs) arrays for performance enhancement, this study fabricated Pt/TaO x /HfO 2 /TiN, Pt/Ti/Al 2 O 3 /HfO 2 /TiN devices, and a Ta NIs‐embedded device with the structure Pt/Ti/Al 2 O 3 /HfO 2 /Ta NI/TiN, and investigated their corresponding resistive switching characteristics. The experimental results demonstrate that during multi‐level conductance state cycling tests, the Pt/TaO x /HfO 2 /TiN structure-benefiting from TaO x as a thermal enhancement layer-exhibits a relatively low coefficient of variation (CV), with its conductance states showing completely non‐overlapping distributions. Notably, compared to the Pt/Ti/Al 2 O 3 /HfO 2 /TiN structure, the Pt/Ti/Al 2 O 3 /HfO 2 /Ta NI/TiN device with embedded Ta NIs achieves three core improvements: a notable decrease in operating voltages, greatly improved cycling consistency with significantly reduced CV of multi-level conductance, and effectively suppressed resistance drift in retention tests. Furthermore, the device shows excellent conductance state distinguishability in analog computing: its 8 independent conductance states remain fully separable under multiple pulse stimulation, with no overlap between adjacent states. These characteristics of HfO 2 -based nonvolatile memristors can provide supportive assurance for the overall accuracy of neuromorphic computing systems.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé ; titre concordant.
- Titre Crossref
- Characteristics of multi-level resistance states in hafnium oxide-based nonvolatile memristors
- Date Crossref
- 01/06/2026
- Éditeur
- IOP Publishing
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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Guilin University of Technology pays non établi dans la noticeUniversité ou école supérieure
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Guangdong Academy of Sciences pays non établi dans la noticeOrganisme public
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Institute of Semiconductors pays non établi dans la noticeStructure de recherche
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College of Materials Science and Engineering Key Laboratory of New Processing Technology for Nonferrous Metal & Materials pays non établi dans la noticeUniversité ou école supérieure
Guilin University of Technology, Guangdong Academy of Sciences et Institute of Semiconductors, avec 1 autre affiliation.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.