Mirror‐Integrated Vertical Van der Waals Photodiode for High‐Efficiency, High‐Speed, and Broadband Photodetection

Le résumé fourni par la source

ABSTRACT The development of self‐powered photodetectors that simultaneously achieve high quantum efficiency and fast response remains a fundamental challenge in optoelectronics, primarily due to the intrinsic trade‐off between photon absorption depth and carrier transit distance. Here, we present a vertical van der Waals photodiode architecture that overcomes this limitation through a synergistic photon recycling and vertical extraction mechanism. By integrating a WSe 2 /MoS 2 heterojunction directly on a metal‐mirror electrode, we concurrently enhance optical absorption while establishing a nanoscale vertical transport channel that minimizes carrier transit time. This dual‐function design enables a record external quantum efficiency of 84% at zero bias, a fast response time of ∼200 ns, a specific detectivity of 1.6 × 10 11 cm Hz 1/2 W −1 , and a power conversion efficiency of 11.2%. Benefitting from the type‐II band alignment heterostructure, the vertical vdW photodiode achieves broadband detection from visible (633 nm) to the near‐infrared region (1550 nm). This work provides a generalizable device strategy for developing next‐generation, high‐performance, and low‐power optoelectronic systems.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.