Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors

Le résumé fourni par la source

The far-UVC band (200–240 nm) is highly attractive for germicidal and solar-blind detection. To address limited surface carrier collection in epitaxial SiC phototransistors, we designed fully ion-implanted lateral phototransistors by combining transistor physics with CMOS-compatible processing. The lateral base width was systematically varied from 1 to 8 μm to investigate its influence on carrier transport and gain. A narrower base significantly enhanced photocurrent amplification, with the 1 μm device reaching 100.7 A/W at 200 nm and 60.0 A/W at 240 nm, while maintaining amplification up to the ~380 nm cutoff. Moreover, dark currents remained as low as 10⁻¹¹ A, confirming the advantage of structural engineering for high-performance far-UVC SiC phototransistors.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.