Epitaxial growth and characterization of AlGaN/GaN HEMT structures on 4 inch directly bonded GaN/SiC substrates

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Abstract We report epitaxial growth and characterization of AlGaN/GaN high-electron-mobility transistor structures on a 4 inch GaN/SiC bonded substrate fabricated by surface activated bonding. The bonded wafer combines low threading dislocation density and high thermal conductivity, enabling high-temperature MOCVD growth without cracks or delamination. The epitaxial layers exhibited uniform Al composition and thickness, significantly reduced dislocation density, and improved sheet resistance compared to conventional SiC substrates. Transmission electron microscopy analysis revealed a recrystallized 3C-SiC interfacial layer, and time-domain thermo-reflectance measurements confirmed low thermal boundary resistance. These results demonstrate the potential of wafer bonding for high-performance GaN RF devices and advanced thermal management.

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