Cryogenic Mismatch and Variability in 22nm FDSOI MOSFETs for Digital Circuits

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This work evaluates cryogenic mismatch and variability in 22nm FDSOI MOSFETs.Mismatch data for Vth,SS and β were extracted using Pelgrom's scaling law,showing increase in scaling factors at CT compared to RT.The drain-current variability increases at CT and is accurately predicted by Croon model based on extracted parameters.At the circuit level,the SNM for inverter-based SRAMs decreases at 4.5 K,degrading the inverter stability.This work provides empirical data and validated models for advanced FDSOI-based digital circuits at CT.

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