Bias-Controlled Temperature Coefficient of InGaN/GaN Multiple Quantum Well Photodetectors

Le résumé fourni par la source

InGaN/GaN multiple quantum well p-i-n photodetectors (PDs) with a thin barrier layer are fabricated on patterned sapphire substrates. Under a bias voltage of -5 V, the fabricated PD exhibits a low room temperature dark current of ~84 pA and a peak quantum efficiency of 97%. As the temperature increases, the dark current increases with reverse bias, while the photocurrent exhibits different trends at low and high reverse bias. The photocurrent of PD rapidly decreases at low bias voltage, exhibiting a high negative temperature coefficient (TC). However, under high bias voltage, it is insensitive to temperature and exhibits an ultra-low positive TC of 0.05 %/K. The bias-controlled TC can be explained by the competing process between the thermal emission and tunneling mechanisms of photogenerated charge carriers during bias voltage and temperature changes. Notably, the ultra-low TC of the photocurrent under high reverse bias indicates that the PD is suitable for high-temperature applications.

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