Engineered local polarization disorder unlocks record efficiency in antiferroelectric capacitors
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Le résumé fourni par la source
Antiferroelectric ceramics are promising for next-generation electrostatic energy storage, yet their performance is fundamentally constrained by the trade-off between high energy storage efficiency (η) and large recoverable energy storage density (Wrec), arising from the antiferroelectric-to-ferroelectric phase transition and associated hysteresis loss. Here, we show that a combination of engineered local polarization disorder and high-field operability enables a highly favorable balance of these metrics. In PbZrO3-based ceramics, we introduced controlled compositional heterogeneity that broadens polarization vector distributions while preserving the antiferroelectric modulation. Phase-field simulations and experiments indicate that this engineered disorder spatially distributes the switching fields associated with the antiferroelectric–ferroelectric transition, thereby reducing polarization hysteresis while maintaining high polarization strength. As a result, the multilayer ceramic capacitors achieve Wrec = 23.2 J cm−3 and η = 98.1% at 167 kV mm−1, corresponding to a figure of merit of 1220, surpassing most reported state-of-the-art multilayer ceramic capacitors under comparable high-field conditions. These findings highlight local polarization disorder as a key mechanism that, in combination with enhanced breakdown strength, enables ultrahigh energy storage performance and offers a promising route toward high-performance capacitive energy storage for advanced pulsed-power applications. The authors introduce controlled compositional heterogeneity to broaden polarization vector distributions while preserving the antiferroelectric modulation in PbZrO3-based ceramics. They reduce polarization hysteresis while maintaining high polarization strength.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé ; titre concordant.
- Titre Crossref
- Engineered local polarization disorder unlocks record efficiency in antiferroelectric capacitors
- Date Crossref
- 22/04/2026
- Éditeur
- Springer Science and Business Media LLC
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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Xi'an Jiaotong University Frontier Institute of Science and Technology and State Key Laboratory for Mechanical Behaviour of Materials pays non établi dans la noticeUniversité ou école supérieure
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Hong Kong Polytechnic University Department of Industrial and Systems Engineering pays non établi dans la noticeUniversité ou école supérieure
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Chinese Academy of Sciences pays non établi dans la noticeOrganisme public
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Shanghai Institute of Ceramics pays non établi dans la noticeStructure de recherche
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Southwest University pays non établi dans la noticeUniversité ou école supérieure
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Huazhong University of Science and Technology pays non établi dans la noticeUniversité ou école supérieure
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Shenzhen Technology University pays non établi dans la noticeUniversité ou école supérieure
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City University of Hong Kong Department of Chemistry pays non établi dans la noticeUniversité ou école supérieure
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School of Electronic Science and Engineering Electronic Materials Research Laboratory pays non établi dans la noticeUniversité ou école supérieure
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School of Aerospace Engineering State Key Laboratory for Strength and Vibration of Mechanical Structures pays non établi dans la noticeUniversité ou école supérieure
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The Key Lab of Inorganic Functional Materials and Devices pays non établi dans la noticeStructure de recherche
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School of Materials and Energy Southwest Mountain Regions Intelligent Agricultural Machinery Equipment Innovation Center pays non établi dans la noticeUniversité ou école supérieure
Frontier Institute of Science and Technology and State Key Laboratory for Mechanical Behaviour of Materials — Xi'an Jiaotong University, Department of Industrial and Systems Engineering — Hong Kong Polytechnic University et Chinese Academy of Sciences, avec 9 autres affiliations.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.