On-wafer 10 Gb/s signal testing of large-area monolithic active pixel sensors for the ALICE ITS3 and ePIC SVT detectors

Le résumé fourni par la source

Abstract Pixel detectors for next-generation high-energy physics experiments must operate at increasingly high data rates to meet the demands of upgraded luminosity. Monolithic Active Pixel Sensors (MAPS) like the MOnolithic Stitched Active pIXel (MOSAIX), developed for ALICE ITS3 at CERN and also adopted by the ePIC SVT at Brookhaven's EIC, include embedded serializers capable of operating at 10.24 Gb/s. On-wafer production testing of such devices is of critical importance, traditional cantilever probing techniques are limited to sub-GHz operation, while modern industrial vertical probing techniques allow operation in the Gb/s range. A dedicated wafer level test infrastructure has been developed specifically for the needs of both the ALICE ITS3 and ePIC SVT detector projects. The system enables testing of MAPS directly on-wafer at 10.24 Gb/s. As a demonstrator NKF7 has been used: a standalone 10.24 Gb/s early prototype serializer developed in the same technology node as MOSAIX. In this work mechanical studies are presented to investigate the interaction between probe needles and the wafer metal pad stack. Moreover, electrical measurements validate the probe-pad contact quality and demonstrate the capability of measuring successfully output data at 10.24 Gb/s on-wafer. The infrastructure is ready for pre-production wafers characterization for both ITS3 and SVT, and sets a foundation for future large volume MAPS testing exceeding 10 Gb/s.

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