Toward Superior Low‐Luminance Uniformity in Active‐Matrix Organic Light‐Emitting Diode Displays: An Optimization Framework for Low‐Temperature Polycrystalline Silicon Thin‐Film Transistor Device, Organic Light‐Emitting Diode Device, and Driving Method Integration

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In this work, we elucidate the mechanisms underlying low‐luminance nonuniformity in low‐temperature polycrystalline silicon‐active‐matrix organic light‐emitting diode (LTPS‐AMOLED) displays and propose optimization strategies focusing on the LTPS‐TFT (thin‐film transistor) device, the OLED device, and the driving method. First, a significant improvement in the grain uniformity of LTPS—from 74.562% to 87.680%—was obtained through enhanced uniformity of the underlying buffer SiO x . A corresponding mechanistic analysis was conducted. This improvement, in turn, resulted in a notable narrowing of the electrical parameter distribution for the S‐TFTs (V TH Range: 0.30 V → 0.15 V, SS Range: 0.07 V/dec → 0.04 V/dec, and Mob range: 20 cm 2 /V·s → 16 cm 2 /V·s), alongside an enhanced DR3 for the D‐TFTs (from 0.48 V/dec to 0.56 V/dec), and ultimately led to significantly better low‐luminance uniformity (4.2 JNCD → 2.6 JNCD). Subsequently, it was demonstrated that reducing the C OLED capacitance to increase its charging speed under low‐luminance (small‐current) conditions markedly improves low‐luminance uniformity (4.2 JNCD → 3.0 JNCD). Finally, further optimization via the driving method confirmed a key finding: a smaller ratio of the C OLED charging time to the total emission time minimizes the impact of OLED device nonuniformity on the overall low‐luminance performance of the LTPS‐AMOLED.

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