Effects of High-LET 181Ta 31+ Irradiation on Top-Gate Carbon Nanotube Thin-Film Transistors
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Le résumé fourni par la source
Thin-film transistors (TFTs) based on carbon nanotubes (CNTs) hold great promise for integrated circuits (ICs) in next-generation deep space exploration. However, the heavy-ion effects in CNT TFTs are still very lacking. In this work, top-gate CNT TFTs with yttrium oxide (Y2O${}_{{3}}\text {)}$dielectric were irradiated with high-energy particles (181Ta${}^{{31}+}\text {)}$at a fluence of$1\times 10^{{6}}$ions/cm2; meanwhile, the degradation phenomenon and corresponding mechanism were systematically investigated. For the irradiation with unbiased condition, the decrease ofon/offratio and transconductance were observed, and the device threshold voltage was found to first shift positively then negatively due to multiple trapping mechanism. Particularly, the heavy-ion irradiation response for CNT TFTs under bias voltage was measured for the first time, which can better reveal a much severer actual working condition. Electrical measurement along with Raman spectroscopy and transmission electron microscopy (TEM) characterization were employed, demonstrating that ionization effect induced gate dielectric defects and single ion strike induced device burnout both played important roles in device performance degradation. All these results provide an important reference for the irradiation hardening technology of CNT-based microelectronic devices in the future.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé, mais le titre doit être comparé manuellement.
- Titre Crossref
- Effects of High-LET 181Ta <sup>31+</sup> Irradiation on Top-Gate Carbon Nanotube Thin-Film Transistors
- Date Crossref
- 01/03/2026
- Éditeur
- Institute of Electrical and Electronics Engineers (IEEE)
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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Hunan University pays non établi dans la noticeUniversité ou école supérieure
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Beijing Microelectronics Technology Institute pays non établi dans la noticeInstitution
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Xiangtan University Hunan Institute of Advanced Sensing and Information Technology pays non établi dans la noticeUniversité ou école supérieure
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College of Materials Science and Engineering pays non établi dans la noticeUniversité ou école supérieure
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College of Electrical and Information Engineering pays non établi dans la noticeUniversité ou école supérieure
Hunan University, Beijing Microelectronics Technology Institute et Hunan Institute of Advanced Sensing and Information Technology — Xiangtan University, avec 2 autres affiliations.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.