Comparison study of DC and RF/Analog performance Analysis of germanium source vertical TFET (Ge-VTFET) and Si 0.5 Ge 0.5 source vertical TFET (Si 0.5 Ge 0.5 -VTFET)

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This article explores the comparative study of germanium source vertical TFET (Ge-VTFET) and Si0.5Ge0.5source vertical TFET ( Si0.5Ge0.5-VTFET) on DC with analog/RF performance by the help of Silvaco 2D TCAD simulator. The outcome shows the performance of Ge-VTFET surpass the Si0.5Ge0.5-VTFET with regard to DC characteristics, subthreshold swing (SS), $\left({{}^{{{\text{I}}_{{\text{ON}}}}}{/_{{{\text{I}}_{{\text{OFF}}}}}}}\right)$ ratio etc. The article emphasizes on essential figures of merit (FOM) like transconductance (gm), gate-to-drain capacitance (Cgd), gate-to-source capacitance (Cgs), conductance (gd) which are all improved in of Ge-VTFET as compared to Si0.5Ge0.5VTFET. The observed on current IONis $2.49 \times {10^{ - 6}}(2.52 \times {10^{ - 5{\text{A}}}}{/_{\mu {\text{m}}}}$), off current IOFFis $1.15 \times {10^{ - 16}}(1.6 \times {10^{ - 17}}^{\text{A}}{/_{\mu {\text{m}}}}$) and ratio ${}^{{{\text{I}}_{{\text{ON}}}}}{/_{{{\text{I}}_{{\text{OFF}}}}}}$ is of $2.16 \times {10^{10}}(1.57 \times {10^{12}}$) for Ge-VTFET (Si0.5Ge0.5-VTFET), respectively. The proposed Ge-VTFET has better temperature stability than the Si0.5Ge0.5-VTFET in terms of ${\text{SS}}{,^{{{\text{I}}_{{\text{ON}}}}}}{/_{{{\text{I}}_{{\text{OFF}}}}}}$ ratio. These results suggest that Ge-VTFET is a splendid performer in terms of RF and analog applications.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.