An Accelerated Lifetime Model of SiC MOSFETs Considering Distribution Characteristics

Le résumé fourni par la source

Although SiC MOSFETs, as third-generation semiconductor devices, have shown significant advantages in breakdown voltage, switching frequency, and other performance, their reliability issues are also more prominent. Power cycling tests is the most common testing method for studying the packaging reliability of SiC MOSFETs. Researchers have conducted extensive power cycling tests on SiC MOSFETs, but the steps of reliability calculation and lifetime prediction based on the existing accelerated lifetime models are complex. This method consists of two parts. Firstly, the structure of the accelerated lifetime model is constructed by combining the Coffin-Manson model and Weibull distribution. Secondly, the likelihood equation systems are derived for both complete data and right censored data. In addition, the accelerated lifetime model is established based on power cycling tests, and the predicted reliability curves are compared with the actual reliability curves to verify the correctness of the proposed method.

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