AlPN/GaN HEMT with Enhanced Sensitivity for Biosensor Applications: A Materials and Simulation Driven Analysis

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In this work, the optimization of the epitaxial layers of GaN HEMTs is presented for the development of highsensitivity devices for bio-detection. AIPN material is used as the barrier layer. Using TCAD simulation, the performance of the HEMT sensor is evaluated and analyzed. To ensure a realistic simulation, measured data are used to validate the TCAD simulation. The sample under test is placed in the gate-drain region of the proposed AIPN/GaN HEMT-based sensor to influence the gate-drain capacitance. Both active and passive sensors were simulated and analyzed. The proposed AIPN/GaN HEMT achieved higher sensitivity than the AlGaN/GaN HEMT sensor in terms of both direct current (DC) parameters and radio frequency (RF) parameters. The steeper subthreshold slope and the higher transconductance of the AIPN/GaN HEMT enhance the sensitivity of the sensor. In comparison to the state of the art, the proposed AIPN barrier material approach in GaN HEMTs improves sensitivity by 6 times in the passive sensor and by 88 % in the active sensor. As a result, the AIPN/GaN HEMT is found to be promising for GaN HEMT-based sensor design.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.