The Influence of Doping on the Carrier Mobility of Semi-Insulating Silicon Carbide

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Semi-insulating silicon carbide (SI-SiC) is a promising wide-bandgap semiconductor material, offering significant advantages for high-power and high-frequency electronic applications. This study focuses on SI-SiC, preparing highpurity SI-SiC (HPSI) samples and SI-SiC samples doped with vanadium (VSI). By integrating resistivity mapping, variable-temperature Hall measurement, room-temperature Hall measurement with ultraviolet (UV) irradiation excitation, and Secondary Ion Mass Spectrometry (SIMS), the influence patterns and underlying physical mechanisms of vanadium doping on SI-SiC carrier mobility were systematically investigated. Results indicate that: (1) The carrier mobility of high-purity SI-SiC is dominated by lattice scattering, which aligns well with the theoretical relationship (mobility is proportional to $\mathrm{T}^{-3 / 2}$); (2) Vanadium doping enhances scattering effects by introducing deep energy levels and lattice distortion, leading to a deviation of the mobility-temperature dependence from the aforementioned $\mathrm{T}^{-3 / 2}$ theoretical law. Additionally, this work also compares the carrier mobility of n-type silicon carbide and SI-SiC. The results reveal that carriers in VSI samples are more susceptible to the trapping effect of deep energy levels, whereas ionization and lattice scattering exert a greater influence on carrier mobility in n type samples. This research provides experimental and theoretical foundations for the doping-controlled tuning of SISiC electrical properties.

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