Performance Characterization of a Compton Camera Prototype Based on a Novel Epitaxial-Quenching-Resistor SiPM

Le résumé fourni par la source

A Compton camera prototype was developed and characterized, utilizing a novel epitaxial-quenching-resistor Silicon Photomultiplier (EQR SiPM). The SiPM, with dimensions of$3.75 \times 3.55 \text{mm}^{2}$and an effective area of$3.00 \times 3.00 ~\text{mm}^{2}$, was configured into a$6 \times 6$array. The array, with horizontal and vertical spacings of 0.58 mm and 0.82 mm respectively, formed a total size of 25.4$\times 25.4 ~\text{mm}^{2}$. Both the scatterer and absorber were constructed from identical Lutetium-yttrium oxyorthosilicate (LYSO) crystal arrays, each comprising$24 \times 24$crystals with dimensions of 0.98$\times 0.98 \times 10 ~\text{mm}^{3}$in 1.0 mm pitch. Coincidence events were acquired using an 8-channel data acquisition card (DAQ). Image reconstruction was performed using a filtered back-projection (FBP) algorithm with a Shepp-Logan filter, optimized for multi-graphics processing units (GPUs) processing. Calibration results demonstrated an energy resolution (Full Width at Half Maximum, FWHM) of 11.89 % at 662 keV. Imaging experiments with a point source yielded an angular resolution of 8.95° (FWHM) at a scatterer-to-absorber distance of 50 mm. Additionally, successful imaging of a V-shaped tubing phantom confirmed the system's ability to accurately image distributed sources. Future work will focus on optimizing the system design, including studying the effects of temperature and bias on SiPM gain, to enhance the camera's performance for various applications.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.