Design rule for morphotropic phase boundary formation in Hf-based material system with high permittivity, low leakage and low thermal budget

Le résumé fourni par la source

One of the key technology enablers for achieving three-dimensional (3D) Dynamic Random Access Memory is the development of dielectric materials with high permittivity, low leakage current, and a low thermal budget. In this work, theoretical analysis reveals that a substitutional doping configuration is crucial to enable the realization of a morphotropic phase boundary (MPB) and low thermal budget. Guided by this, we present the fabrication of a La-doped Hf 0.5 Zr 0.5 O 2 (HZO) dielectric with a record-high permittivity of ~83 at a low thermal budget (~450 °C). The film has a physical thickness of 10 nm (EOT = 0.46 nm) and demonstrates a low leakage current of 1E-6 A/cm 2 at 1 V. Reliability assessments suggest that our films can be stable up to 2.25 V with a 0.01% failure rate and a dielectric area of 0.1 cm 2 for over 10 years. The successful development of this dielectric establishes a strong foundation for future transistors, memories, and their 3D integration.

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