Controlling the Scandium Gradient and Microstructure in AlN Thin Films via a Magnetron Sputtering-Ion Implantation Strategy

Le résumé fourni par la source

Scandium (Sc)-doped aluminum nitride (AlN) thin films are critical for high-frequency, high-power surface acoustic wave (SAW) devices. A composite Sc doping strategy for AlN thin films is proposed, which combines magnetron sputtering pre-doping with post-doping via ion implantation to achieve gradient doping and tailor microstructural characteristics. The crystal structure, surface composition, and microstructural defects of the films were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). Results indicate that the Sc content in pre-doped ScAlN films was optimized from below 10 at.% to above 30 at.%, while the films maintained a stable (002) preferred orientation. XPS analysis confirmed the formation of Sc-N bonds, and EDS mapping revealed a gradient distribution of Sc within the subsurface region, extending to a depth of approximately 200 nm. High-resolution TEM revealed localized lattice distortions and surface amorphization induced by ion implantation. This work demonstrates the feasibility of ion implantation as a supplementary doping technique, offering theoretical insights for developing AlN films with high Sc doping concentrations and structural stability. These findings hold significant potential for optimizing the performance of high-frequency, high-power SAW devices.

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