Line contact mode-enhanced rod-shaped CeO₂ abrasives for high-efficiency chemical mechanical polishing

Le résumé fourni par la source

Cerium oxide (CeO₂) has become a key abrasive for chemical mechanical polishing (CMP) of silicon (Si) wafer due to its moderate hardness, variable valence states (Ce³⁺/Ce⁴⁺), and the ability to form Ce-O-Si bonds. However, traditional irregular or granular CeO₂ abrasives mainly operate in a point contact mode during the CMP process, which leads to low mechanical grinding efficiency and easily scratched surfaces. It is thus difficult to meet the demands of industrial production for both high material removal rate (MRR) and low surface roughness (Sa). In this study, the controllable synthesis of CeO₂ abrasives with different morphologies—spherical (diameter: ~100 nm), rod-shaped (length: 150–600 nm, width: 50–100 nm), and triangular (height: ~700 nm, thickness: ~100)—was achieved by precisely regulating the hydrothermal temperature (120–180 ℃). The polishing results showed that the rod-shaped CeO₂ exhibited the optimal polishing rate (MRR = 321 nm/min) and polished surface roughness (Sa = 0.554 nm). The excellent polishing performance of rod-shaped CeO₂ stems from its line contact mode, which is characterized by a large contact area, uniform pressure distribution, and strong yet uniform mechanical grinding capability. The development of this novel rod-shaped CeO₂ abrasives holds considerable scientific significance and engineering value for promoting the development of the semiconductor CMP industry.

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