Design of an Ultra-Compact and Broadband C–X -Band Wilkinson Power Divider/Combiner in 65-nm CMOS Technology
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Le résumé fourni par la source
This article presents an ultra-compact and broadband Wilkinson power divider/combiner (WPDC) designed for large-scale phased arrays. To minimize the chip area, a shortened transmission line (T-line) topology using a metal-stacked inductor is introduced into the two stages. Furthermore, to address the isolation bandwidth (BW) limitations, two sections of shortened T-lines are adopted and innovatively implemented within a single inductor footprint by utilizing a magnetic coupling self-canceling technique. Detailed analysis and design flow of the proposed network synthesis are provided, demonstrating a 67% area reduction. Moreover, a novel shielding topology is employed to simultaneously enhance isolation between combiners and ensure amplitude/phase uniformity across distribution branches. To verify the proposed technique, aC–X-band WPDC, consisting of two 1:4 power combining units dedicated to intermediate frequency (IF) and local oscillator (LO) bands, respectively, is fabricated in a 65-nm bulk CMOS process. The prototype exhibits a measured insertion loss (IL) of within 3.2/3.4 dB and isolation exceeding 24.9/26.0 dB across the IF (6–10 GHz)/LO (8–12GHz) band. Notably, isolation greater than 60 dB is attained between IF and LO crossover networks, which is validated in antenna-in-package (AiP) measurements. This design features an ultra-compact core area, a highly competitive fractional isolation BW, and an outstanding branch isolation among state-of-the-art reported works, rendering it well-suited for area-constrained large-scale and multibeam phased-array systems.
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Le contrôle bibliographique ouvert
DOI retrouvé dans Crossref DOI retrouvé, mais le titre doit être comparé manuellement.
- Titre Crossref
- Design of an Ultra-Compact and Broadband <i>C–X</i> -Band Wilkinson Power Divider/Combiner in 65-nm CMOS Technology
- Date Crossref
- 01/04/2026
- Éditeur
- Institute of Electrical and Electronics Engineers (IEEE)
- Type
- journal-article
Ce recoupement confirme des métadonnées liées au DOI. Il ne confirme ni la méthode ni les conclusions de l’étude, et il ne compte pas comme une seconde source scientifique indépendante.
Où se fait cette recherche
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Beijing Institute of Technology pays non établi dans la noticeUniversité ou école supérieure
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Sun Yat-sen University pays non établi dans la noticeUniversité ou école supérieure
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School of Integrated Circuits and Electronics Beijing Key Laboratory of Millimeter Wave and Terahertz Technology pays non établi dans la noticeUniversité ou école supérieure
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School of Electronics and Communication Engineering pays non établi dans la noticeUniversité ou école supérieure
Beijing Institute of Technology, Sun Yat-sen University et Beijing Key Laboratory of Millimeter Wave and Terahertz Technology — School of Integrated Circuits and Electronics, avec 1 autre affiliation.
Une affiliation ne permet pas de déduire la nationalité d’un auteur.