Process-induced variability in a three-channel FinFET hydrogen sensor: design, statistical assessment and sensitivity evaluation

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Abstract This work presents a comprehensive reliability and sensitivity evaluation of the three-channel FinFET designed for hydrogen gas sensing under process-induced variability. The sensor utilizes a platinum (Pt) gate that undergoes measurable work-function ( ϕ m ) modulation in response to varying hydrogen concentrations, ranging from 0 ppm to 10 4 ppm. TCAD simulations are employed to model the key statistical fluctuation in work-function variation (WFV). Moreover, Gaussian distribution and quantile-quantile (QQ) analysis are used to validate the statistical behavior of threshold voltage ( V th ), subthreshold swing (SS), and drain current ( I D ). The sensitivity of ON-current ( I on ), OFF-current ( I off ), and V th under hydrogen exposure is evaluated with respect to the standard deviation, revealing that I on sensitivity reaches up to 1144% at minimal drain bias (50 mV). Compared with other state-of-the-art FinFET-based hydrogen sensors, the proposed design demonstrates superior electrostatic control, higher robustness against variability, and enhanced sensitivity, making it a promising candidate for low-power, CMOS-compatible gas-sensing applications.

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