Trade-Off Between Channel Geometry and Self-Heating Related Hot Carrier Degradation in LDMOS Devices

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In this work, the self-heating effect (SHE) and hot carrier injection (HCI) behaviors in Si n-type lateral double-diffused MOSFET (n-LDMOS) devices were evaluated using a multiphysics field analysis platform, integrating transient thermo-reflectance (TR) imaging and fast multipulse IV (MPIV) measurement. It is observed that scaled n-LDMOS devices with smaller channel length and larger channel width exhibit more pronounced SHE, which leads to reduced threshold voltage (${V} _{\text {TH}}$) shift but increased saturation drain current (${I} _{\text {Dsat}}$) degradation under ac stress conditions. These phenomena can be attributed to the decreased impact ionization rate in the gate-overlapped channel and the elevated lattice temperature in the n-drift region. These findings underscore the complex impact of SHE on HCI reliability. Therefore, it is crucial to balance HCI-induced${V} _{\text {TH}}$shift and SHE-induced${I} _{\text {Dsat}}$degradation, highlighting the feasibility of optimizing HCI reliability through channel geometry engineering in n-LDMOS devices.

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