Quantum thermoelectric diodes and transistors with squeezed reservoir engineering

Le résumé fourni par la source

Abstract This work investigates inelastic thermoelectric systems exhibiting tight relations among electronic charge, electronic heat, and photonic heat currents. By employing a double quantum dot setup interacting with a squeezed photon reservoir, we show that such architectures can operate as high-performance quantum thermoelectric diodes and transistors. Central to this capability is the role of quantum squeezing, which markedly enhances the rectification of both charge and heat currents. Moreover, we demonstrate that a photon-assisted inelastic transport mechanism sustains a thermal transistor effect even within the linear-response regime — a regime where conventional elastic devices typically fail to amplify heat currents. Notably, quantum squeezing further enhances the thermal gain, underscoring its utility in quantum heat control. These results not only deepen our understanding of nonequilibrium quantum thermoelectrics but also provide a viable pathway toward designing devices with tailored energy-conversion functionalities through quantum reservoir engineering.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.