Ultralow Dielectric Constant Films from the Polyisoprene Modified with Dual Functions of Benzocyclobutene and Vinyl Groups

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The rapid advancement of the semiconductor industry has imposed heightened demands on interlayer insulating dielectric materials to meet varying processing requirements. In this contribution, a series of polyolefin-based low- k materials were developed by integrating dual functional groups of benzocyclobutene (BCB) and vinyl together through grafting the BCB group onto the polyisoprene (PI) mainchain. As a comparison, the PI mainchain was also selectively modified as a hydrogenated PI (HPI) counterpart. Both the introduced BCB and the remaining vinyl groups on PI could be selectively cured at 250 and 360 °C, respectively. Notably, with the increase of BCB group contents, the storage moduli, tan δ, and glass transition temperature ( T g ) of the cured samples were regularly enhanced, and the coefficients of thermal expansion (CTE) values were correspondingly decreased. Especially, by modulating the curing behavior of BCB and/or vinyl groups, the T g s could be tailored across a broad range (29 to 240 °C), ensuring adaptability to diverse processing conditions. As expected, the polyolefin-based materials exhibit exceptional dielectric performance with all film samples demonstrating a dielectric constant ( D k ) < 2.5 and dielectric loss ( D f ) < 5 × 10 –3 (at 1 MHz). This work illustrated that the PI modified with dual functions of BCB and vinyl groups possessed significant potential as a low- k material for future versatile, integrated circuit applications.

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