Investigation of RF Stress on the Characteristics of GaN-on-Si HEMTs

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In this work, we present the effects of RF stress on the DC, RF small-signal and large-signal characteristics of GaN-on-Si HEMTs and analyze their relative mechanisms. The device's threshold voltage$(\boldsymbol{V}_{\text{th }})$was found to positively shift first and then negatively shift with the increase of the stress. The device's maximum transconductance$(g_{\text{mmax }})$, small-signal cut-off frequency$(\boldsymbol{f}_{\mathbf{T}})$and maximum oscillation frequency$(\boldsymbol{f}_{\text{max }})$, and large-signal output power$\left(P_{\text{out }}\right)$, peak PAE and linear gain were found to degrade after the RF stress. Input-only RF stress and DC bias stress tests were also conducted, and the results of negligible change in the device's characteristics indicate the crucial role of the large-signal RF signal on the drain electrode. RF stress experiments under UV-assisted illumination were carried out, providing evidence that the instability of the device's characteristic during the$\mathbf{R F}$stress is related to the trapping effects.

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