High-Sensitivity in Complementary Metal-Oxide-Semiconductor for Low-Light Amplification

Le résumé fourni par la source

We reviewed recent advancements in the high-sensitivity design of complementary metal-oxide-semiconductor (CMOS) image sensors (CIS), focusing on low-light amplification. CIS performance has been enhanced in poorly lit environments with elevated noise levels and trade-offs between resolution and pixel dimensions. Challenges related to photon-to-electron conversion, readout noise, and increasing architectural complexity due to sensor miniaturization were also examined to propose technical solutions. The state-of-the-art strategies developed so far include back-side illuminated (BSI) pixel structures, enlarged pixel designs, correlated double sampling (CDS), adaptive analog-to-digital converters (ADCs), and advanced anti-reflective coatings. The adaptability of CIS technologies in expressway traffic management systems is critical for effective vehicle detection and monitoring under fluctuating illumination and adverse weather conditions. Recent technological advancements lead to significant performance improvements, including quantum efficiency exceeding 90%, signal-to-noise ratio enhancements of 10 dB, and dynamic range expansion surpassing 75 dB. Nonetheless, an optimal balance among sensitivity, resolution, and cost remains a challenge in CIS development. Through the integration of novel semiconductor materials, machine learning–based noise suppression techniques, and advanced noise reduction algorithms are used to enhance sensor performance. The advancement in low-light imaging and next-generation CMOS sensor technologies has shown transformative progress in medical diagnostics, security surveillance, and consumer electronics.

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