(Invited) Novel Metals for Scaled Interconnects

Le résumé fourni par la source

Copper (Cu) interconnects are an increasingly important bottleneck in integrated circuits due to energy consumption and latency caused by the notable increase in Cu resistivity as dimensions decrease, primarily due to electron scattering at surfaces. Here, we showcase the potential of two classes of metals for scaled interconnects 1) directional conductors that have low bulk resistivity and anisotropic structures that mitigate electron surface scattering, and 2) topological semimetals that utilize topologically protected surface states to suppress electron scattering. We will highlight thin films of PtCoO 2 of various thicknesses, synthesized by molecular beam epitaxy (MBE) coupled with a post-deposition annealing process and the superior quality of PtCoO 2 films is demonstrated by multiple characterization techniques. We will also discuss CoSi and GaPd, topological semimetals that exhibit reduced resistivity with decreasing wire dimensions, including a novel single-crystal synthesis technique. The thickness-dependent resistivity curves illustrate that PtCoO 2 significantly outperforms effective Cu (Cu with TaN barriers) and Ru in resistivity below 20.0 nm with a more than 6x reduction compared to effective Cu below 6.0 nm, having a value of only 6.32 μΩ∙cm at 3.3 nm. CoSi exhibits a marked reduction in resistivity from its bulk values, but is still not competitive with Cu.

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