Research on optical soliton characteristics GaSb-based ~2 μ m wavelength two-section integrated optical chip

Le résumé fourni par la source

Abstract The optical soliton characteristics of GaSb-based ~2 μ m wavelength integrated optical chips have broad application prospects in optoelectronic fields such as optical communications, infrared countermeasures, and gas environment monitoring. In the research of two-section integrated optical chips, more attention is paid to their passive mode-locked characteristics. The ability of its structure to generate stable soliton transmission has not yet been studied, which will limit its further application in high-performance near-mid infrared optoelectronic technology. In this paper, we design and prepare a GaSb-based ~2 μ m wavelength two-section integrated semiconductor laser chip structure, and test and analyze its related properties of soliton, including power−injection current−voltage ( P − I − V ), temperature and mode-locked characteristics. Experimental results show that the chip can achieve stable mode-locked operation at nearly ~2 μ m wavelength and present the working characteristics of near optical soliton states and multi-peak optical soliton states. By comparing and analyzing the measured optical pulse sequence curve with the numerical fitting based on the pure fourth order soliton approximation solution, it is confirmed that the two-section integrated optical chip structure can generate stable transmission of multi-peak optical soliton. This provides a research direction for developing near-mid infrared mode-locked integrated optical chips with high-performance property of optical soliton.

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