Reliability Correlation Coefficient of Fail Bit Counts of Flash Memory

Résumé fourni par la source

Reliability correlation coefficient of NAND flash memory devices is a statistical measure of how linearly associated fail bit counts (λFBC) are at different baking times after the retention test. The block-level data retention reliability correlation coefficients of commercial 2D and 3D NAND Flash memory devices have been measured through temperature-driven fail bit count (λFBC) degradation over time. The data retention reliability correlation coefficient has been evaluated between the initial λFBC (t 0 hr) and the final λFBC (t 7 hrs) when the NAND was subjected to a baking temperature of 120 ∘C. The critical value of the reliability correlation coefficient for vertical 3D MLC NAND (r 0.93) is much higher compared to planar 2D MLC NAND (r 0.60) due to the difference in λFBC. Furthermore, we demonstrate that a high correlation coefficient (r = 0.93) enables a reduction in ECC parity overhead by 10–30%, without compromising error correction capability. This strong correlation can be leveraged in designing algorithms for 3D NAND that more accurately predict and correct temperature-driven λFBC degradation.

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