Void Inspection Using Stress Field Imaging in Densely Patterned Bonded Wafers

Résumé fourni par la source

Bonding technologies in heterogeneous wafer integration packaging processes requires defect identification methods beyond the capabilities of the standard ultrasonic defect inspection methods. In the present study, a special infrared defect inspection method with optional stress sensitive mode is discussed for void inspection. Artificial and unintentionally generated process induced voids were identified and qualitatively characterized in non-metallized bonded wafer. Additionally, process induced voids were also revealed in highly metallized device wafers and void position were correlated with that of observed in scanning acoustic microscopy. Stress imaging mode of the infrared method opened up an alternative characterization of defects based on their localized stress lobes.

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