Physical Models for Epitaxial Doping Dependence of SELC in SiC Power Devices

Le résumé fourni par la source

An analytical model for predicting normal incidence single-event leakage current (SELC) threshold voltage in SiC power devices is presented. The onset of low linear energy transfer (LET), normal incidence SELC in SiC diodes and MOSFETs is shown to depend only on the LET of the respective heavy-ion during irradiation. The concept of critical energy stored in the depletion region and released by the passing ion is re-introduced and used to derive an expression for high LET, normal incidence SELC threshold voltage that depends only on epitaxial layer doping. The model is validated by experimental data with devices ranging from 1200 to 6500 V ratings. Low LET SEB response is shown to be consistent between diodes and MOSFETs with critical power models. The relative independence of high LET, normal incidence SELC, and epitaxial layer thickness is demonstrated experimentally and is supported by the model. Implications for SELC-optimized SiC power devices are described.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.