Two 5.6 mW Over-Neutralized 120 Ghz Low-Noise Amplifiers in 14 nm FinFET CMOS

Le résumé fourni par la source

This paper presents two low noise amplifiers (LNAs) in 14 nm FinFET technology for D-band applications. FinFET transistors suffer from low gain at frequencies beyond 100 GHz. In addition, parasitic capacitance due to metal fill and high gate resistance makes it harder to design using this process at these frequencies. In this article, we present a device-centric design methodology. Additionally, the RC over-neutralization technique is employed to counteract the low device gain. Furthermore, we provide layout considerations, critical to tackle the parasitics associated with scaled FinFET processes and very high frequencies beyond 100 GHz. The proposed techniques and careful millimeter-wave layout have enabled achieving several metrics which advance the state-of-the-art. To the best of our knowledge, we report the lowest power consumption at 5.6 mW, and the lowest core area of$0.03 ~\text{mm}^{2}$for a D-band LNA. We report two LNA realizations, a narrowband LNA with 9 GHz bandwidth, 15.2 dB gain and 5.5 dB minimum measured noise figure (NF) and a 18 GHz wideband LNA with 12.7 dB gain and 5.8 dB minimum measured NF. To our knowledge, they are the first$\mathbf{1 4} \mathbf{~ n m}$FinFET LNAs at D-band in a commercially available technology.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.