A High-Efficiency Fully Integrated GaN-on-Si Power Amplifier Using Drain Current Scaling Factor

Le résumé fourni par la source

This letter presents a novel broadband high-efficiency continuous inverse class-F (CCF–1) mode monolithic microwave integrated circuit (MMIC) power amplifier (PA) based on the drain current waveform amplitude scaling factor$\lambda $. To minimize the current clipping and efficiency reduction caused by the reactive extension parameter [$1-\gamma $sin($\theta $)] in CCF–1when$\vert \gamma \vert \gt 0.5$, a modified maximum efficiency admittance boundary can be determined at$\vert \gamma \vert \gt 0.5$through theoretical analysis of the impact of$\lambda $on CCF–1performance. A load-pull simulation is carried out to verify this theoretical result. Furthermore, a GaN-on-Si MMIC PA operating over 1.6−3 GHz is designed and fabricated based on proposed method. The measurement results show a drain efficiency (DE) of 52%−69% and an output power (Pout) of 34.8−36.6 dBm. When tested with a 100 MHz 64-quadrature amplitude modulation (QAM) signal at 2.4 GHz with an average Pout (Pavg) of 30 dBm, the PA achieves an adjacent channel power (ACPR), ratio (ACPR) of −35.3 dBc with a 32.6% average DE (DEavg) without using digital predistortion (DPD).

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