An 88.6 ppm/K Robust Cryogenic DTMOS-Based Bandgap Reference Operating from 8K to 300K for Quantum Computing Applications

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This work presents a dynamic-threshold MOS (DTMOS)-based bandgap reference (BGR) circuit providing a stable reference voltage at deep cryogenic temperatures (CT) down to 8 K. Although conventional BGRs based on bipolar junction transistors (BJT) offer excellent performance, their behavior degrades at deep CT because of an increase in base resistance and current gain reduction. In contrast, this work leverages the favorable cryogenic characteristics of DTMOS to generate a stable reference voltage at about 520 mV. The presented circuit is implemented in Infineon's 130 nm BCD technology and occupies an active area of$0.009 \text{mm}^{2}$. It provides a stable reference voltage across an ultra-wide temperature range from 8 K to 300 K, achieving a measured temperature coefficient (TC) of approximately$88.6 \text{ppm} / \mathrm{K}$. It consumes$215 \mu \mathrm{W}$at 8 K from a 1.5 V power supply.

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