Enhanced High Laser Irradiation Tolerance in Single-Junction InGaAsP Laser Power Converters With 42% Conversion Efficiency

Le résumé fourni par la source

We fabricated a single-junction InGaAsP laser power converter (LPC) with an active area of 1 cm2for 1064 nm laser applications using metalorganic chemical vapor deposition. To suppress series resistance (${R}_{\text {S}}\text {)}$losses under high-power laser irradiation, an 11-$\mu $m-thick Au/Ag surface electrode with a width of$23~\mu $m and a shadowing loss of 7% was formed by electroplating. The device exhibited the internal quantum efficiency (IQE) of 0.909 at 1065nm and a temperature coefficient of −0.22%${}_{\text {rel.}}\cdot $K${}^{-{1}}$. The fill factor (FF) exhibited a maximum of 76.9% at 3.0W$\cdot $cm–2, attributed to the thick surface electrode. The${R}_{\text {S}}$was calculated to be$1.3\times 10^{-{2}}~\Omega \cdot $cm2by fitting the JV curves under 4.0 W$\cdot $cm–2irradiation using a one-diode model. This result corresponds to an approximately 19% reduction relative to that of the previously reported InGaAsP LPC with a 3.2-$\mu $m-thick Au/Ag electrode and an active area of 0.06mm2. A conversion efficiency ($\eta \text {)}$of 42.0% and an FF of 76.7% were achieved in the single-junction InGaAsP LPC with an active area of 1cm2under 4.0 W$\cdot $cm–2. To the best of our knowledge, these represent the highest reported values for any single-junction LPC designed for 1064 nm lasers with an active area$\ge 1$cm2. Power loss analysis revealed that the${R}_{\text {S}}$caused FF and$\eta $losses of 3.9%abs.and 2.1%abs.at 4.0 W$\cdot $cm–2, respectively. The obtained FF to that in the theoretical limit ratio implied that the thick surface electrode enhanced the high laser irradiation resistance. This technique can be applied to any other LPCs to mitigate the FF degradation under high laser irradiation.

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