High-Performance SiC/GaN Hybrid ANPC Inverter Utilizing GaN on AlN Substrate Integration

Le résumé fourni par la source

This paper presents the design and experimental validation of a hybrid silicon carbide (SiC) and gallium nitride (GaN) Active Neutral-Point Clamped (ANPC) inverter, featuring GaN high-electron-mobility transistors (HEMTs) mounted on aluminum nitride (AlN) substrates. The AlN integration provides high thermal conductivity, electrical insulation, and a low-inductance commutation path, enabling improved thermal management and reduced parasitic effects in high-frequency operation. The multilevel ANPC architecture combines low conduction losses from SiC MOSFETs in low-frequency outer switches with the fast switching capability of 650 V GaN HEMTs in high-frequency inner positions. A 1 kW prototype operating at 800 V DC and 80 kHz switching frequency tested with an R–L load validates the concept, demonstrating the potential of GaN-on-AlN integration for compact, high-efficiency power conversion in high-speed drive applications.

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