Seamless 2D-MoS2/3D-Si heterojunctions for white light detection applications

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Abstract In this study, we investigate the quality of junction formation and its impact on the electronic and optoelectronic properties of two-dimensional (2D) multilayered molybdenum disulfide (MoS2) films directly grown on three-dimensional (3D) p-type silicon (p-Si) (110) substrates. Large-area (15 mm × 15 mm), few-layer (8–10 layers) MoS2 films were synthesized using a facile vapor-phase transport method, achieving seamless integration with the underlying Si substrate. Comprehensive structural and morphological characterizations confirm the uniform growth of multilayer 2D-MoS2 and the formation of a well-defined 2D/3D MoS2/Si heterojunction interface. The vertical MoS2/Si heterostructure exhibits a maximum photocurrent of ∼2.131 × 10−6 A and a responsivity of ∼13.31 A W−1 under white light illumination of 20 µW cm−2 at a bias voltage of −3 V. These results highlight the critical role of engineered heterointerfaces in enhancing device performance, including improved adhesion and charge transport across the active layers. This work demonstrates the feasibility of integrating a variety of 2D materials, including 2D-MoS2, with silicon platforms for complementary metal oxide semiconductor (CMOS) compatible optoelectronic applications. The findings present promising opportunities for developing next-generation photosensors, photodetectors, p–n heterojunction diodes, and vertical junction transistors based on 2D/3D hybrid architectures.

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