Substrate Orientation-Dependent Synaptic Plasticity and Visual Memory in Sol–Gel-Derived ZnO Optoelectronic Devices

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We report Al/ZnO/Al optoelectronic synaptic devices fabricated on c-plane and m-plane sapphire substrates using a sol-gel process. The devices exhibit essential synaptic behaviors such as excitatory postsynaptic current modulation, paired-pulse facilitation, and long-term learning-forgetting dynamics described by Wickelgren's power law. Comparative analysis reveals that substrate orientation strongly influences memory performance: devices on m-plane consistently show higher EPSCs, slower decay rates, and superior retention compared to c-plane counterparts. These characteristics are attributed to crystallographic effects that enhance carrier trapping and persistent photoconductivity. To demonstrate their practical applicability, 3 × 3-pixel arrays of adjacent devices were constructed, where a "T"-shaped optical pattern was successfully encoded, learned, and retained across repeated stimulation cycles. These results highlight the critical role of substrate orientation in tailoring synaptic plasticity and memory retention, offering promising prospects for ZnO-based optoelectronic synaptic arrays in in-sensor neuromorphic computing and artificial visual memory systems.

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