Charge Field Modulation Mechanism and Its Experiments in SJ-Based SOI BCD Process

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This paper proposes the charge field modulation (CFM) mechanismin silicon-on-insulator (SOI) devices and conducts experimental validation. To quantitatively analyze the CFM of arbitrary local doping-induced charges in the top silicon layer of SOI on the surface electric field, the local doping can be equivalently represented as a uniform doping across the entire region by considering the principle of equipotential. A CFM factor is derived to guide the design of SOI integrated devices. Based on the CFM mechanism, a new super junction (SJ) structure with modulated charge balance is designed through the optimization of thermal budget. The SJ N-pillar is decomposed into a localized high-doped region and a full-extent low-doped region, effectively addressing the problem of inner PN junction breakdown in the conventional SJ. Furthermore, a compensated diffusion-induced variable doping profile is formed within the bulk by adopting a compatible process. Then, an SJ-based SOI bipolar-CMOS-DMOS (BCD) process platform has been developed, achieving a breakdown voltage$V_\mathrm{B}$of 294.4 V and a specific on-resistance$R_{\text {on,sp }}$of${5.5 \, \mathrm{m}} {\Omega} \cdot \text{cm}^{{2}}$for the core nLDMOS device, with a high figure of merit (FOM) value of$15.76 \text{MW}/ \text{cm}^{2}$.

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