Improving Atomic Layer Deposition Process of Silicon Oxide (SiO2)

Le résumé fourni par la source

Due to film uniformity issues and material wastage caused by changes in the hardware setup of the atomic layer deposition (ALD) equipment, the bis(diethylamino)silane (SiBDEA))ozone oxygen mixture ($\mathrm{O}_{3} / \mathrm{O}_{2}$) silicon oxide (SiO2) process of this equipment needs to be re-optimized urgently. After the experiment with method design of experiments (DoE), a new recipe for the SiO2process was discovered. On the one hand the film properties were comparable to the old process, and with the new recipe the material consumption could be reduced to $50 \%$. On the other hand, the temperature range of $150^{\circ} \mathrm{C}-300^{\circ} \mathrm{C}$ showed no ALD window, in contrast to the literature [1]. The purpose of this SiO2ALD film is an application as protective films in some microelectromechanical systems (MEMS) devices, such as protecting structures from etching with Xenon difluoride (XeF2). [2] It was proved that the minimum cycle number for an effective protective film deposited with the new recipe is at least 50, this means thickness of about 4.5 nm.

Ce résumé expose les affirmations des auteurs. BNTIC ne l’interprète pas comme une validation indépendante des résultats.