Decoupling of Mixed Reliability Degradation Mechanisms in LDMOS Using Ultrafast Measurement and Neural Network

Le résumé fourni par la source

This work presents a systematic investigation into the mixed reliability degradation mechanisms-including hot carrier injection (HCI), negative bias temperature instability (NBTI), and self-heating effect (SHE)-in n-type lateral double-diffused MOSFET (n-LDMOS) devices. An ultrafast multipulse IV (MPIV) measurement technique, integrated with a trained neural network, is employed to successfully decouple the complex interactions among these degradation mechanisms. The results reveal that HCI degradation is markedly enhanced by NBTI but suppressed by SHE. By mapping the relationship between operating frequency and threshold voltage (${V}_{\text {TH}}\text {)}$shift, it is found that HCI degradation is predominantly enhanced by NBTI at high frequencies, while the influence of SHE becomes more pronounced at low frequencies. These findings provide new insights into the reliability challenges of n-LDMOS devices under practical operating conditions.

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