Characterization of large ferroelectric polarization and high- T C in sol–gel deposited PbTiO 3 -based perovskite thin films

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Abstract Bi Me O 3 –PbTiO 3 (where Me represents transition metals) perovskite-type thin films have been widely studied due to their superior ferroelectric properties, including robust ferroelectric polarization and high Curie temperatures. In this study, PbTiO 3 -based perovskite thin films of x Bi(Cu 1/2 Zr 1/2 )O 3 –(1 – x )PbTiO 3 ( x BCZ–(1 – x )PT) were designed and prepared on Pt(111)/Ti/SiO 2 /Si substrates using the conventional sol–gel method. The x BCZ–(1 – x )PT thin films demonstrate remarkable crystallinity, characterized by a perovskite structure and a dense microstructure, which contribute to their high-performance ferroelectric and fatigue properties. Notably, the thin films exhibit large remnant polarization (2 P r ) values, reaching 98 μC⋅cm −2 and 74 μC⋅cm −2 for the 0.05BCZ–0.95PT and 0.1BCZ–0.9PT compositions, respectively. Furthermore, the thin films also demonstrate a high Curie temperature ( T C = 510 °C), as well as favorable fatigue properties and low leakage current, suggesting their potential applicability in ferroelectric devices.

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