Electrophysical Properties of Structures with Barium Titanate and Oxide Films Formed by the Sol-Gel Method on Titanium

Le résumé fourni par la source

Aluminum oxide and barium titanate films were formed on titanium and oxidized single-crystal silicon substrates using the sol-gel method. The dependence of the capacitance and the dielectric loss tangent on the frequency of the Al2O3/BaTiO3/Ni capacitor structure was studied in the range of 200 Hz–200 kHz on a titanium substrate using the substrate as the lower electrode. In the high-frequency region (20–200 kHz), the standard deviation of the capacitance was 95–97 pF, and in the low-frequency region (0.2–10.0 kHz), it was 80–94 pF. The capacitance and dielectric loss tangent values remained within the established standard deviation values for a year. Examples of images of microdisks and waveguides obtained by photolithography and chemical etching of structures with Al2O3, SiO2 and BaTiO3 films are given for subsequent development of planar waveguides and electrooptical modulators.

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