Orthorhombic ZrO2 thin films via atomic layer deposition from tris(dimethylamino)cyclopentadienyl zirconium and water

Le résumé fourni par la source

Different zirconium dioxide phases exhibit attractive functional properties, making them suitable for various applications. Among these, orthorhombic o-ZrO₂ is of particular interest due to its distinctive ferroelectric behavior. However, synthesizing phase-pure o-ZrO₂ thin films has remained challenging. Here, we demonstrate a robust water-based atomic layer deposition (ALD) process for high-quality polycrystalline o-ZrO₂ thin films using tris(dimethylamino)cyclopentadienyl zirconium as the precursor. In the deposition temperature range of 200–250 °C the processes yielded essentially phase-pure o-ZrO₂ films with a growth-per-cycle (GPC) of 0.5 Å/cycle, whereas above 275 °C monoclinic m-ZrO₂ films were obtained with GPC of 0.6 Å/cycle. Interestingly, longer relaxation times during deposition were found to affect the growth rate, suggesting changes in crystallization dynamics and stabilization of different orthorhombic space groups. The films were characterized by grazing-incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), ellipsometry, and X-ray photoelectron spectroscopy (XPS) analyses.

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